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논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 김득영
- 발행연도
- 2013
- 저작권
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In this study, Cr: ZnO (Cr : 5 at.%) thin films on sapphire
substrates using Pulsed Laser Deposition Method for application for ferromagnetic semiconductor fabrication.
The growth temperature was fixed at 500 ℃, the O2 partial
pressure, working pressure change is given according to the variables of each film properties were analyzed.
All samples ZnCrO (002) peak were identified by XRD analysis and ZnCrO (002) peak intensity was increased as O2 partial pressure and working pressure decreases.
Electrical properties was increased while O2 parctial pressure and working pressure decreased. because improved cystallinity as Cr ions were stability doped.
Through the analysis of the Raman spectra, we observed the E2-low mode of wurzite nonpolar ZnO phase and E2-low mode was shifted with O2 partial pressure, working pressure increased.
For photoluminescence, these samples showed the ultra-violet emission due to near-band-edge emission. According to improvement of surface property, the exciton emission is independent and strong.
We observed increased of Oi(oxygen interstitial) and oxygen compound with O2 partial pressure, working pressure increased.
Analysis of the magnetic properties through the SQUID. Magnetic hysteresis loop was observed in 1 mTorr. however, was not observed in 5 mTorr that was observed high ratio of Oi and ZnCr2O4 peak
This preclusion was due to the formation of anti-ferromagnetic oxygen compounds.
substrates using Pulsed Laser Deposition Method for application for ferromagnetic semiconductor fabrication.
The growth temperature was fixed at 500 ℃, the O2 partial
pressure, working pressure change is given according to the variables of each film properties were analyzed.
All samples ZnCrO (002) peak were identified by XRD analysis and ZnCrO (002) peak intensity was increased as O2 partial pressure and working pressure decreases.
Electrical properties was increased while O2 parctial pressure and working pressure decreased. because improved cystallinity as Cr ions were stability doped.
Through the analysis of the Raman spectra, we observed the E2-low mode of wurzite nonpolar ZnO phase and E2-low mode was shifted with O2 partial pressure, working pressure increased.
For photoluminescence, these samples showed the ultra-violet emission due to near-band-edge emission. According to improvement of surface property, the exciton emission is independent and strong.
We observed increased of Oi(oxygen interstitial) and oxygen compound with O2 partial pressure, working pressure increased.
Analysis of the magnetic properties through the SQUID. Magnetic hysteresis loop was observed in 1 mTorr. however, was not observed in 5 mTorr that was observed high ratio of Oi and ZnCr2O4 peak
This preclusion was due to the formation of anti-ferromagnetic oxygen compounds.
목차
1. 서론 = 12. 이론적 고찰 = 22.1 스핀트로닉스 = 22.2 희박자성반도체 = 42.3 Pulsed Laser Deposition 법의 원리 = 53. Cr:ZnO 박막 제작 및 특성분석 = 73.1 Cr:ZnO 박막의 성장 = 73.2 Cr:ZnO 박막의 특성 분석 = 93.2.1 Scanning electron microscopy = 93.2.2 X-ray Diffraction = 103.2.3 Hall effect 측정 = 113.2.4 Photoluminescence = 133.2.5 Raman 분광 분석 = 143.2.6 X-ray photoelectron spectroscopy = 153.2.7 SQUID = 164. 결과 및 논의 = 204.1 Cr:ZnO 박막의 구조적 특성 = 204.2 Cr:ZnO 박막의 전기적 특성 = 244.3 Cr:ZnO 박막의 광학적 특성 = 264.3.1 Cr:ZnO 박막의 PL 특성 = 264.3.2 Cr:ZnO 격자 진동 특성 = 284.4 Cr:ZnO 박막의 결합에너지 특성 = 304.5 Cr:ZnO 박막의 강자성 특성 = 375. 결론 = 386. 참고문헌 = 40
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