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논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 유봉영
- 발행연도
- 2013
- 저작권
- 한양대학교 논문은 저작권에 의해 보호받습니다.
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Currently, the through silicon via (TSV) technology which was three-dimensionally interconnects the electric circuits was studied for the power efficiency and effective operation of the memory or logic devices. The copper was usually filled in the TSV due to its high electrical conductivity, chip price and convenience of the electrodeposition process. The nanotwinned copper (NT-Cu) which has ultra-high strength and low electrical resistivity was also investigated to replace the conventional copper.
In this study, various experiments for understanding basic mechanism of TSV filling was carried out. It was investigated that several pre-treatments to form the well prepared condition of the TSV sample before the electrodeposition process. It was also studied that effect of additives and concentration of ion in the electrolyte. Finally, TSV was filled by pulsed current electrodeposition to forms the nanotwinned copper in the TSV. The microstructure of filled Cu in the TSV was identified by transmission electron microscope (TEM). Tensile strength, electrical resistivity and thermal extrusion property were also investigated.
In this study, various experiments for understanding basic mechanism of TSV filling was carried out. It was investigated that several pre-treatments to form the well prepared condition of the TSV sample before the electrodeposition process. It was also studied that effect of additives and concentration of ion in the electrolyte. Finally, TSV was filled by pulsed current electrodeposition to forms the nanotwinned copper in the TSV. The microstructure of filled Cu in the TSV was identified by transmission electron microscope (TEM). Tensile strength, electrical resistivity and thermal extrusion property were also investigated.
목차
ABSTRACT1. Introduction2. Background2.1 Through-Silicon-Via (TSV)2.2 Electrodeposition process2.3 Additives for the TSV filling2.4 Curvature enhanced accelerator coverage (CEAC) mechanism2.5 Nanotwinned copper3. Experimental3.1. Chemical composition3.2. Electrochemical system3.3 Charaterization4. Result and discussion4.1. Pre-treatments for TSV filling4.2. Effect of additives on the TSV filling4.3. Effect of concentration of ion on the TSV filling4.4. Inspecting the TSV with 3D x-ray computed-tomography(CT)4.5. TSV filling with nanotwinned copper5. ConclusionsReference국문요지
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