메뉴 건너뛰기
.. 내서재 .. 알림
소속 기관/학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
로그인 회원가입 고객센터 ENG
주제분류

추천
검색

논문 기본 정보

자료유형
학위논문
저자정보

정재훈 (고려대학교, 고려대학교 대학원)

지도교수
권오명
발행연도
2013
저작권
고려대학교 논문은 저작권에 의해 보호받습니다.

이용수0

표지
AI에게 요청하기
추천
검색

이 논문의 연구 히스토리 (2)

초록· 키워드

오류제보하기
Nanomaterials, such as carbon nanotubes (CNTs), silicon nanowire, and graphene, have been finding many applications in diverse fields relating to displays, sensors, data storage, nanoelectronics, and so on. The thermal characterization of nanomaterials is crucial for understanding energetics in electric and energy-conversion systems that utilize these nanomaterials, which is a precondition for their optimal design and application. However, despite their importance, reliable quantitative data on the thermal characteristics of these nanomaterials are hard to find, compared with their electric and chemical counterparts, due to the lack of proper tools for their thermal characterization
Although scanning thermal microscope (SThM) has been developed quite actively and sometimes applied for the thermal characterization of nanomaterials because of its exceptional spatial resolution, which is about 100 nm, it still remains as a qualitative measurement tool. Although we recently developed the double scan technique, which allows quantitative temperature profiling by eliminating the influence of heat transfer through the air, it does not always guarantee the quantitative measurement using SThM.
Herein, we exactly locate the subsurface microstructures by measuring the absolute phase lag of thermal wave with advanced scanning thermal wave microscopy (STWM). And by developing the quantitative temperature/temperature distribution measurement techniques using SThM, we measure the temperature of the electrically heated multiwall carbon nanotube (MWCNT) and the thermal contact resistance between CVD-grown graphene and SiO2.
At first, we differentiate the components of the absolute phase lag of thermal wave, isolate the component related to the position of the subsurface heater, and locate the subsurface heater accurately by using STWM, which can image the phase lag and amplitude of thermal wave with sub-micrometre resolution using SThM. Through the benchmark experiment, we profile the phase lags of thermal wave with the distortion due to heat conduction through the air with the driving frequency at 3.2 kHz and measure the phase lag due to the thermal isolation surrounding the subsurface heaters by measuring the 3f voltage, which is generated in the heater. And we experimentally calibrate the phase lags due to the thermal time constant of the SThM probe and thermal contact resistance between the probe tip and sample surface with exposed micro-heater. Finally we isolate the phase lag due to the distance traveled by the thermal wave in the medium and find out the exact location of two subsurface heaters whose depths are different.
Second, we developed the null-point method by which one can quantitatively measure the temperature of a sample without disturbances arising from the tip-sample thermal conductance, based on the principle of the double scan technique. We first checked the effectiveness and accuracy of the null-point method using 5 ?m- and 400 nm-wide aluminium lines. Then, we quantitatively measured the temperature of electrically heated multiwall carbon nanotubes (MWCNTs) using the null-point method.
At third, by expanding the principle of null-point method, we developed a theory and method of NP SThM, which can obtain quantitative temperature profiles even when tip-sample thermal conductance is disturbed due to abrupt changes in the surface topography or surface properties such as hydrophilicity. We first check the Seebeck coefficient of the SThM probe by using a 5 ?m wide aluminum line patterned in a four-probe configuration on pyrex glass. And then, we quantitatively profile the temperature distribution of electrically heated aluminum line with NP SThM.
Finally we directly measure the thermal contact resistance at the CVD-grown graphene/SiO2 interface by utilizing the NP SThM with relatively much higher accuracy than that of the previous studies(5.6 × 10-9 ~ 3.3 × 10-8 m2K/W). The abnormal thermal contact resistance measured in this study is caused by the extrinsic factors, such as ripples formed at the producing process. Therefore, one can characterize the intrinsic thermal contact nature by characterizing the thermal transport phenomena with NP SThM, which can directly and quantitatively profile the temperature distribution.

목차

TABLE OF CONTENTS
TABLE OF CONTENTS ------------------------------------------------------------------------------------- ⅳ
LIST OF FIGURES -------------------------------------------------------------------------------------- ⅵ
LIST OF TABLES -------------------------------------------------------------------------------------------- ⅹ
NOMENCLATURE ------------------------------------------------------------------------------------------ iv
1. INTRODUCTION ------------------------------------------------------------------------------------------- 1
2. NANOSCALE RANGE FINDING OF SUBSURFACE STRUCTURES BY MEASURING THE ABSOLUTE PHASE LAG OF THERMAL WAVE ----------------------------------------------------- 2
2.1 Scanning thermal wave microscopy (STWM) --------------------------------------------------- 2
2.2 Experimental setup ---------------------------------------------------------------------------------- 3
2.3 Benchmark experiment setup ---------------------------------------------------------------------- 4
2.4 Measurement of ?''s due to SThM probe, tip-sample contact and thermal insulation ------ 7
2.5 Measurement of the phase lag due to the distance travelled by the thermal wave ---------- 8
3. QUANTITATIVE TEMPERATURE MEASUREMENT USING NULL POINT METHOD ---- 13
3.1 Principle --------------------------------------------------------------------------------------------- 13
3.2 Experimental setup --------------------------------------------------------------------------------- 15
3.3 Benchmark experiment ---------------------------------------------------------------------------- 18
3.4 Quantitative local temperature measurement of a nano-sized metal line and multiwall carbon nanotube ------------------------------------------------------------------------------------ 19
4 QUANTITATIVE TEMPERATURE PROFILING THROUGH NULL POINT SCANNING THERMAL MICROSCOPY ------------------------------------------------------------------------------ 25
4.1 Principle --------------------------------------------------------------------------------------------- 25
4.2 Experimental setup and procedure --------------------------------------------------------------- 29
4.3 Measuring the Seebeck coefficient of the SThM probe --------------------------------------- 30
4.4 Continuous temperature profiling by null point scanning thermal microscopy ----------- 31
5. MEASUREMENT OF THERMAL CONTACT RESISTANCE BETWEEN CVD-GROWN GRAPHENE AND SIO2 USING NULL POINT SCANNING THERMAL MICROSCOPY ---- 34
5.1 Introduction ----------------------------------------------------------------------------------------- 34
5.2 Experimental setup and procedure --------------------------------------------------------------- 35
5.3 Characterization of electrical contact resistance between the graphene and metal-electrodes -------------------------------------------------------------------------------------------- 39
5.4 Measurement of thermal contact resistance at the graphene/SiO2 interface --------------- 42
6. DISCUSSIONS ---------------------------------------------------------------------------------------------- 47
REFERENCES ------------------------------------------------------------------------------------------------- 49
ABSTRACT (in Korean) -------------------------------------------------------------------------------------- 54

최근 본 자료

전체보기

댓글(0)

0