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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.33 No.5
- 발행연도
- 2024.9
- 수록면
- 144 - 147 (4page)
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초록· 키워드
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The effect of the gate-drain distance (L<sub>GD</sub>) on device properties was examined in gallium nitride (GaN)-based high electron mobility transistors (HEMTs). We studied 70 nm gate length GaN HEMTs using a 7 nm-thick InAlGaN thin barrier, with L<sub>GD</sub> ranging from 1.3 to 2.6 𝜇m. When we measured the typical device characteristics, the device performance in terms of the drain current and transconductance improved as L<sub>GD</sub> decreased. However, the short-channel effects (SCEs) were enhanced when L<sub>GD</sub> was reduced. By reducing L<sub>GD</sub>, the threshold voltage was negatively shifted and the subthreshold swing and drain-induced barrier lowering were increased, despite the 7 nm-thick InAlGaN barrier. To date, the SCEs have not been investigated in depth because GaN has a wide band-gap and strong immunity to electric fields. We conducted the electrical characterization of 70 nm gate length GaN-based HEMTs for the study involving SCEs with respect to L<sub>GD</sub>. Our systematic investigation revealed that SCEs occur even when a thin barrier is applied to GaN HEMTs. Additionally, detailed investigations for mitigating SCEs are required, as SCEs increase power consumption and deteriorate radio-frequency performance.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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