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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2024.3
- 수록면
- 158 - 164 (7page)
- DOI
- https://doi.org/10.1007/s13391-023-00460-1
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초록· 키워드
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An organic semiconductor (OSC) is a potential material in spintronics which is posses a long spin diff usion length due toits low spin-orbit coupling and hyperfi ne interaction. Among the OSC P3HT that already exists, in spintronic devices. Inthis report, An organic spin valve (OSV) device was fabricated using Regioregular Poly 3-hexylthiophene-2,5- diyl (RRP3HT).
The RR-P3HT was used as a spacer layer, with FeCo and NiFe used as bottom and top electrodes, respectively.
The device magnetoresistance (MR) was observed to be a positive MR of 2.9% at 50 K while negative MR of 0.6, 0.4,and 0.014% were observed at 150, 200, and 300 K, respectively. Observed AMR is positive at room temperature for Fecoand NiFe single layer as 0.08 and 0.18%, respectively. The magnetic electrodes were prepared using Ultra High VacuumDC magnetron sputtering, and RR-P3HT was prepared using a spin coater. The magnetic properties of the device werestudied by vibrating sample magnetometer (VSM) analysis. The VSM results conclude that both electrodes are magneticmaterials with diff erent coercive forces. The FeCo and NiFe, both electrodes crystal structures were analyzed from GracingIncidence X-Ray Diff raction (GI-XRD) using Cobalt K alpha. FeCo and NiFe were the Body-Centered Cubic crystalstructures, and the electrode’s JCPDS card numbers are 50–0795 and 37–0474, respectively.
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