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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.24 No.3
- 발행연도
- 2024.6
- 수록면
- 179 - 183 (5page)
- DOI
- 10.5573/JSTS.2024.24.3.179
이용수
초록· 키워드
오류제보하기
We have developed a process for the efficient implementation of short channel devices using a lift-off self-align structure, which simultaneously implements the gate stack(dielectric / electrode) and spacer. By utilizing the lift-off process in a semiconductor device structure with 2-D materials as the channel, we have experimentally verified the stable implementation of short channel lengths down to the level of 50 nm using AFM/SEM. Furthermore, through analysis of the drain current, we have confirmed the improvement in electrical characteristics by applying the self-align technique to structures with the same channel length. The proposed method in this study can offer efficient value in research activities such as device structure and property development in the field of device research, providing a more efficient and cost-saving process.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTAL DETAILS
III. RESULTS AND DISCUSSIONS
IV. CONCLUSIONS
REFERENCES
참고문헌 (11)
참고문헌 신청
Kim Taikyu, et al. "Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated semiconductor chips." Advanced Materials, 2204663., 2022
Mitta Sekhar Babu, et al. "Electrical characterization of 2D materials-based field-effect transistors." 2D Materials, 8.1, 012002., 2020
Li Yang, et al. "Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces." Advanced Electronic Materials, 8.10, 2200513., 2022
Liu Anhan, et al. "Dielectrics for 2-D electronics: From device to circuit applications." IEEE Transactions on Electron Devices, 70.4, 1474-1498., 2022
Lam Sang, et al. "RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology." IEEE Electron Device Letters, 24.4, 251-253., 2003
Mitta Sekhar Babu, et al. "Electrical characterization of 2D materials-based field-effect transistors." 2D Materials, 8.1, 012002., 2020
Li Yang, et al. "Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces." Advanced Electronic Materials, 8.10, 2200513., 2022
Liu Anhan, et al. "Dielectrics for 2-D electronics: From device to circuit applications." IEEE Transactions on Electron Devices, 70.4, 1474-1498., 2022
Lam Sang, et al. "RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology." IEEE Electron Device Letters, 24.4, 251-253., 2003
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