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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.24 No.1
- 발행연도
- 2024.2
- 수록면
- 25 - 32 (8page)
- DOI
- 10.5573/JSTS.2024.24.1.25
이용수
초록· 키워드
오류제보하기
We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al₂O₃/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTAL
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (18)
참고문헌 신청
H. Amano et al., “The 2018 GaN power electronics roadmap,” J. Phys. D 51, pp. 163001.1-48 (2018).
T. Hashizume et al., “State of the art on gate insulation and surface passivation for GaN-based power HEMTs,” Mater. Sci. Semicond. Process 78, pp. 85-95 (2018).
M. Kuzuhara et al., “AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation,” Jpn. J. Appl. Phys. 55, pp. 070101.1-12 (2016).
J. T. Asubar et al., “Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation,” J. Appl. Phys. 129, pp. 121102.1-28 (2021).
O. Ambacher et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys. 85, pp. 3222-3233 (1999).
T. Hashizume et al., “State of the art on gate insulation and surface passivation for GaN-based power HEMTs,” Mater. Sci. Semicond. Process 78, pp. 85-95 (2018).
M. Kuzuhara et al., “AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation,” Jpn. J. Appl. Phys. 55, pp. 070101.1-12 (2016).
J. T. Asubar et al., “Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation,” J. Appl. Phys. 129, pp. 121102.1-28 (2021).
O. Ambacher et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys. 85, pp. 3222-3233 (1999).
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