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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제24권 제2호
- 발행연도
- 2023.4
- 수록면
- 132 - 139 (8page)
- DOI
- https://doi.org/10.1007/s42341-023-00430-2
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초록· 키워드
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Tandem solar cells with four and two terminals fabricated with III-V on Si have achieved 35.9% conversion efficiency, which goes beyond the S-Q limit of single junction silicon solar cells. Compared to perovskite tandem solar cells, III-V//Si tandem solar cells have proven their high stability and reliability, which makes them potential candidates for commercialization in future for terrestrial applications. For the proper integration of III-V top and intermediate subcells with silicon bottom subcell, different approaches are being investigated globally. Mechanical bonding is an important approach that utilizes appropriate materials of high transmittance and conductance and hence it is being experimented globally except in the case of direct epitaxial growth of III-V materials on silicon. This review article presents a comprehensive description of diff erent approaches adopted for the integration of subcells in tandem architecture.
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