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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한양대학교 세라믹공정연구센터 Journal of Ceramic Processing Research Journal of Ceramic Processing Research 제18권 제10호
- 발행연도
- 2017.10
- 수록면
- 754 - 759 (6page)
- DOI
- 10.36410/jcpr.2017.18.10.754
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초록· 키워드
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The iron-ion doped Cu(In, Ga)Se2 thin films were prepared on flexible stainless steel substrates via a non-vacuum spin-coatingprocess. The influence of iron-ion doping in the morphology and properties of Cu(In, Ga)Se2 solar cells was investigated indetail. When the molar ratio of iron ions to the total amount of indium and gallium ions in Cu(In, Ga)Se2 was increased, thegrain sizes of the Cu(In, Ga)Se2 thin films were reduced and the grain morphology became angular. Iron-ion doping in Cu(In,Ga)Se2 thin films substantially facilitated the formation of grain boundaries and additional shunt paths, leading to highprobability of electron-hole recombination. As a result, the conversion efficiency of the prepared Cu(In, Ga)Se2 solar cellsdecreased dramatically due to iron-ion doping.
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