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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국정보통신학회JICCE Journal of information and communication convergence engineering Journal of information and communication convergence engineering 제9권 제3호
- 발행연도
- 2011.6
- 수록면
- 310 - 314 (5page)
이용수
이 논문의 연구 히스토리 (3)
2011
Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function
Hak-Kee Jung
Journal of information and communication convergence engineering
2011.06
학술저널
Analysis of Threshold Voltage for DGMOSFET Using Nonuniform Channel Doping Profile
Hak-Kee Jung
,
Jihyeong Han
,
Dongsoo Cheong
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING
2011.06
학술대회자료
Analysis of Subthreshold Swing for Variable Channel Doping Profile in DGMOSFET
Hak-Kee Jung
,
Jihyeong Han
,
Jaehyeong Lee
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING
2011.06
학술대회자료
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초록· 키워드
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This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson’s equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage rolloff is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. POTENTIAL AND THRESHOLDVOLTAGE MODEL
Ⅲ. POTENTIAL AND THRESHOLD VOLTAGE BASED ON OUR MODEL
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (5)
참고문헌 신청
1. [학술지(정기간행물)] - W.Haensch / 2006 / ilicon CMOS devices beyond scaling / IBM J.Res Develop 50 (3) : 339 ~ 361
2. [인터넷자원] - Semiconductor Industry Association / / Technology Roadmap on Semiconductors
3. [학술지(정기간행물)] - G.Zhang / 2008 / hreshold voltage model for short channel FD-SOI MOSFETs with vertical Gaussian profile / IEEE Trans. Electron Devices 55 : 803 ~ 809
4. [학술대회논문] - P.K.Tiwari / 2009 / 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs With Vertical Gaussian Doping Profile / IMPACT-2009 : 52 ~ 55
5. [학술지(정기간행물)] - Q.Chen / 2002 / A Comprehensive Analytical Subthreshold Swing(S)Model for Double-Gate MOSFETs / IEEE Trans. Electron Devices 49 : 1086 ~ 1090
2. [인터넷자원] - Semiconductor Industry Association / / Technology Roadmap on Semiconductors
3. [학술지(정기간행물)] - G.Zhang / 2008 / hreshold voltage model for short channel FD-SOI MOSFETs with vertical Gaussian profile / IEEE Trans. Electron Devices 55 : 803 ~ 809
4. [학술대회논문] - P.K.Tiwari / 2009 / 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs With Vertical Gaussian Doping Profile / IMPACT-2009 : 52 ~ 55
5. [학술지(정기간행물)] - Q.Chen / 2002 / A Comprehensive Analytical Subthreshold Swing(S)Model for Double-Gate MOSFETs / IEEE Trans. Electron Devices 49 : 1086 ~ 1090
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