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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.22 No.6
- 발행연도
- 2022.12
- 수록면
- 417 - 425 (9page)
- DOI
- 10.5573/JSTS.2022.22.6.417
이용수
초록· 키워드
오류제보하기
As a next-generation memory, resistive random access memory (RRAM) is attracting attention for its fast speed and non-volatility. Nevertheless, an additional selecting element is required to solve the sneak path problem. However, nonlinear devices such as transistors and selectors not only degrade density of the RRAM array, but also increase difficulty of 3D integration. Therefore, in this study, we propose a method for improving the current-voltage (I-V) nonlinearity of an Pt/Al₂O₃/TiO<SUB>x</SUB>/Ti/Pt RRAM. Oxygen concentration was controlled based on electrical flexibility of TiO<SUB>x</SUB> encompassing metallic and semiconducting properties; and three devices with different TiO<SUB>x</SUB> were fabricated. As the O/Ti atomic ratio increases from 1.31 to 1.74, the enhanced I-V nonlinearity was confirmed, which was also quantitatively verified through fitting with a hyperbolic sine function. Reflecting the measured nonlinearity, RRAM passive array was constructed and its read margin was investigated by SPICE simulation. As a result, it is demonstrated that the read margin was improved by increasing the nonlinearity. For TiO<SUB>1.74</SUB> sample which exhibits the highest nonlinearity, a read margin of 22.97% was achieved in 2<SUP>7</SUP> × 2<SUP>7</SUP> array size. By increasing the nonlinearity of RRAM devices, it is expected that RRAM passive array can be utilized for future high-density storage class memory.
목차
Abstract
I. INTRODUCTION
II. DEVICE FABRICATION
III. NONLINEARITY MEASUREMENT
IV. READ MARGIN SIMULATION
V. CONCLUSIONS
REFERENCES
참고문헌 (41)
참고문헌 신청
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F. Pan, S. Gao, C. Chen, C. Song, and F. Zeng, “Recent progress in resistive random access memories: Materials, switching mechanisms, and performance,” Mater. Sci. Eng. R-Rep., vol. 83, pp. 1-59, 2014.
H.-S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, “Metal-oxide RRAM,” Proc. IEEE, vol. 100, no. 6, pp. 1951-1970, 2012.
K. Jeon, J. Kim, J. J. Ryu, S.-J. Yoo, C. Song, M. K. Yang, D. S. Jeong, and G. H. Kim, “Selfrectifycing resistive memroy in passive crossbar arrays,” Nat. Commun., vol. 12, p. 2968, 2021.
Y. Duan, H. Gao, J. Guo, M. Yang, Z. Yu, X. Shen, S. Wu, Y. Sun, X. Ma, and Y. Yang, “Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM,” Appl. Phys. Lett., vol. 118, p. 013501, 2021.
F. Pan, S. Gao, C. Chen, C. Song, and F. Zeng, “Recent progress in resistive random access memories: Materials, switching mechanisms, and performance,” Mater. Sci. Eng. R-Rep., vol. 83, pp. 1-59, 2014.
H.-S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, “Metal-oxide RRAM,” Proc. IEEE, vol. 100, no. 6, pp. 1951-1970, 2012.
K. Jeon, J. Kim, J. J. Ryu, S.-J. Yoo, C. Song, M. K. Yang, D. S. Jeong, and G. H. Kim, “Selfrectifycing resistive memroy in passive crossbar arrays,” Nat. Commun., vol. 12, p. 2968, 2021.
Y. Duan, H. Gao, J. Guo, M. Yang, Z. Yu, X. Shen, S. Wu, Y. Sun, X. Ma, and Y. Yang, “Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM,” Appl. Phys. Lett., vol. 118, p. 013501, 2021.
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