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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.31 No.6
- 발행연도
- 2022.11
- 수록면
- 156 - 160 (5page)
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초록· 키워드
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We investigated the optical and electrical characteristics of Sn-doped indium tin oxide (ITO) thin films. Bi-layer ITO/Sn film samples were prepared by RF sputtering followed by in-situ annealing. Three different conditions with respect to the Sn layer were prepared on a soda-lime substrate: thickness of 0.0 (only glass substrate), 1.0, and 2.0 nm, respectively. ITO films of 170 and 400 nm thickness were deposited on Sn/soda lime glass successively at a substrate temperature of 260 ∘C. ITO/Sn bi-layer films were in-situ annealed at both 260 and 400 ∘C for 30 min under 6 × 10<SUP>−6</SUP> Torr. We studied the optical and electrical properties of the prepared Sn-doped ITO films under various growth conditions, ITO thickness and Sn thickness, and annealing temperature. The best results were obtained from the ITO (400 nm)/Sn (2.0 nm) bi-layer sample annealed at 400 ∘C, for which average visible transmittance of ~88 % in a wavelength range of 380-780 nm and a sheet resistance R<SUB>□</SUB> of 5.88 Ω were obtained.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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