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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2020.8
- 수록면
- 380 - 390 (11page)
이용수
초록· 키워드
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In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.
목차
Ⅰ. INTRODUCTION
Ⅱ. PHYSICAL MODELING AND NUMERICAL METHOD
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (43)
참고문헌 신청
X. Guo / 2001 / Current crowding in GaN/InGaN light emitting diodes on insulating substrates / J. Appl. Phys 90:4191~4195
M. -H. Kim / 2007 / Origin of efficiency droop in GaN-based light-emitting diodes / Appl. Phys. Lett 91:183507
D. -S. Shin / 2012 / Study of droop phenomena in InGaN-based blue and green lightemitting diodes by temperature-dependent electroluminescence / Appl. Phys. Lett 100:153506
M. Binder / 2013 / Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in(GaIn)N quantum wells by visualization of hot carriers in photoluminescence / Appl. Phys. Lett 103:071108
E. Kioupakis / 2011 / Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes / Appl. Phys. Lett 98:161107
M. -H. Kim / 2007 / Origin of efficiency droop in GaN-based light-emitting diodes / Appl. Phys. Lett 91:183507
D. -S. Shin / 2012 / Study of droop phenomena in InGaN-based blue and green lightemitting diodes by temperature-dependent electroluminescence / Appl. Phys. Lett 100:153506
M. Binder / 2013 / Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in(GaIn)N quantum wells by visualization of hot carriers in photoluminescence / Appl. Phys. Lett 103:071108
E. Kioupakis / 2011 / Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes / Appl. Phys. Lett 98:161107
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