지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2020.8
- 수록면
- 273 - 276 (4page)
이용수
초록· 키워드
오류제보하기
We report on the relationship between output current for quadrant photodetector (QPD) and bias voltage in silicon-based p-i-n (positive-intrinsic-negative) QPD examined using millisecond pulse laser (ms pulse laser) irradiation. The mechanism governing the relationship was further studied experimentally. The output current curves were obtained by carrying out QPD under different bias voltages (0-40 V) irradiated by ms pulse laser. Compared to other photodetectors, the relaxation was created in the output current for QPD which is never present in other photodetectors, such as PIN and avalanche photodetector (APD), and the maximum value of relaxation was from 6.8 to 38.0 μA, the amplitude of relaxation increases with bias value. The mechanism behind this relaxation phenomenon can be ascribed to the bias voltage induced Joule heating effect. With bias voltage increasing, the temperature in a QPD device will increase accordingly, which makes carriers in a QPD move more dramatically, and thus leads to the formation of such relaxation.
목차
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENT
Ⅲ. RESULTS
Ⅳ. DISCUSSION
Ⅴ. CONCLUSION
REFERENCES
참고문헌 (22)
참고문헌 신청
T. W. Ng / 2005 / Gaussian laser beam diameter measurement using a quadrant photodiode / Opt. Laser Technol 76:065110
S. Jo / 2016 / High range precision laser radar system using a Pockels cell and a quadrant photodiode / Appl. Phys. B 122:143
Z. Li / 2013 / Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon / J. Appl. Phys 114:033104
X. Wang / 2010 / Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes / J. Appl. Phys 108:033103
X. Lv / 2017 / Laserinduced damage threshold of silicon under combined millisecond and nanosecond laser irradiation / J. Appl. Phys 121:113102
S. Jo / 2016 / High range precision laser radar system using a Pockels cell and a quadrant photodiode / Appl. Phys. B 122:143
Z. Li / 2013 / Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon / J. Appl. Phys 114:033104
X. Wang / 2010 / Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes / J. Appl. Phys 108:033103
X. Lv / 2017 / Laserinduced damage threshold of silicon under combined millisecond and nanosecond laser irradiation / J. Appl. Phys 121:113102
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