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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2017.8
- 수록면
- 358 - 363 (6page)
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In this study, we present a detailed investigation of luminescence properties of a blue light-emittingdiode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grownon patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). HighresolutionX-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy(SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystalquality, the threading dislocation density, surface morphology, residual strain existing in the active regionand optical properties. We conclude that the crystalline quality and surface morphology can be greatlyimproved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtainedbecause the residual strain that existed in the active region can be relaxed when the LED is grown onpatterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superiorluminescence properties of blue light LED from the viewpoint of residual strain in the active region.
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참고문헌 (16)
참고문헌 신청
T. Jiang / 2016 / Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire / Sci. Rep 6:19955
D. H. Wang / 2013 / Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates / J. Alloys Compd 555:311~314
S. R. Xu / 2013 / Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition / Nano Lett 13(8):3654~3657
Dang-Hui Wang / 2016 / Investigation on HT-AlN Nucleation Layers and AlGaN Epifilms Inserting LT-AlN Nucleation Layer on C-Plane Sapphire Substrate / Current Optics and Photonics 20(1):125~129
T. Pinnington / 2008 / InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition / J. Cryst. Growth 310(10):2514~2519
D. H. Wang / 2013 / Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates / J. Alloys Compd 555:311~314
S. R. Xu / 2013 / Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition / Nano Lett 13(8):3654~3657
Dang-Hui Wang / 2016 / Investigation on HT-AlN Nucleation Layers and AlGaN Epifilms Inserting LT-AlN Nucleation Layer on C-Plane Sapphire Substrate / Current Optics and Photonics 20(1):125~129
T. Pinnington / 2008 / InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition / J. Cryst. Growth 310(10):2514~2519
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