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Ferroelectric memories have been studied for ~60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO₂-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.
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강유전성 산화하프늄: 소재 측면의 돌파구
기존 컴퓨팅 기술의 한계와 뉴로모픽 컴퓨팅
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