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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.21 No.6
- 발행연도
- 2021.12
- 수록면
- 373 - 380 (8page)
- DOI
- 10.5573/JSTS.2021.21.6.373
이용수
초록· 키워드
오류제보하기
A high-sensitive diode temperature sensor using a simple circuit combining a diode and a resistor is proposed. First, a diode voltage-temperature relationship is derived for the temperature change, which is verified through analytical simulations and experimental measurements. In order to enhance the temperature sensitivity, we propose a novel approach that uses the ratio of the resistor voltage to the diode voltage (V<SUB>R</SUB>/V<SUB>D</SUB>) is employed. We also derive the temperature sensitivity expression of our model as a function of VS (power supply voltage) and V<SUB>D0</SUB> (reference diode voltage measured at 25 ℃). It is observed that the temperature sensitivity can be controlled by adjusting V<SUB>s</SUB>. For Vs = 5.0 V, R = 100 Ω, and V<SUB>D0</SUB> = 0.761 V, the temperature sensitivity shows a significant increase by 8.7 times compared to the typical temperature characteristics of the diode over temperatures ranging from -25 ℃ to 75 ℃.
목차
Abstract
I. INTRODUCTION
II. THEORIES
III. SYSTEM DESIGN AND ANALYSIS
IV. MEASUREMENT RESULTS
V. CONCLUSIONS
REFERENCES
참고문헌 (8)
참고문헌 신청
M. Mansoor, et al, “Silicon diode temperature sensors,” Sens. & Actr., A: Phys., Vol. 232, No. 1, pp. 63-74, Aug., 2015.
K. Dzinavatonga, “Application of the 1N4148 Diode to temperature measurements between −140 °C and 5 °C,” IEEE Sens. J., Vol. 16, No. 23, pp. 8542-8544, Dec., 2016.
S. Rao, et al, “4H-SiC p-i-n diode as Highly Linear Temperature Sensor,” IEEE Trans. E. Dev., Vol. 63, No. 1, pp. 414-418, Jan., 2016.
S. Santra, et al, “Silicon on insulator diode temperature sensor-A detailed analysis for ultrahigh temperature operation,” IEEE Sens. J., Vol. 10, No. 5, pp. 997-1003, May, 2010.
J. W. Precker, et al, “Experimental estimation of the bandgap in silicon and germanium from the temperature-voltage curve of diode thermometers,” Am. J. Phys., Vol. 70, No. 11, pp. 1150-1153, Nov., 2002.
K. Dzinavatonga, “Application of the 1N4148 Diode to temperature measurements between −140 °C and 5 °C,” IEEE Sens. J., Vol. 16, No. 23, pp. 8542-8544, Dec., 2016.
S. Rao, et al, “4H-SiC p-i-n diode as Highly Linear Temperature Sensor,” IEEE Trans. E. Dev., Vol. 63, No. 1, pp. 414-418, Jan., 2016.
S. Santra, et al, “Silicon on insulator diode temperature sensor-A detailed analysis for ultrahigh temperature operation,” IEEE Sens. J., Vol. 10, No. 5, pp. 997-1003, May, 2010.
J. W. Precker, et al, “Experimental estimation of the bandgap in silicon and germanium from the temperature-voltage curve of diode thermometers,” Am. J. Phys., Vol. 70, No. 11, pp. 1150-1153, Nov., 2002.
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