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논문 기본 정보

자료유형
학술저널
저자정보
김민중 (한양대학교) 신재수 (대전대학교) 윤주영 (한국표준과학연구원)
저널정보
한국표면공학회 한국표면공학회지 한국표면공학회지 제54권 제6호
발행연도
2021.12
수록면
365 - 370 (6page)

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In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

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Abstract
1. 서론
2. 실험방법
3. 결과 및 고찰
4. 결론
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UCI(KEPA) : I410-ECN-0101-2022-581-000135493