Atomic layer deposited ZrxAl1-xOy film as high κ gate insulator for high performance ZnSnO thin film transistor

Jun Li; You-Hang Zhou; De-Yao Zhong; Chuanxin Huang; Jian Huang; Jianhua Zhang

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자료유형: 학술저널

저자정보: Jun Li (Shanghai University) You-Hang Zhou (Shanghai University) De-Yao Zhong (Shanghai University) Chuanxin Huang (Shanghai University) Jian Huang (Shanghai University) Jianhua Zhang (Shanghai University)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.14 No.6

발행연도: 2018.1

수록면: 669 - 677 (9page)

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In this work, the high κ Zr x Al 1−x O y fi lms with a diff erent Zr concentration have been deposited by atomic layer deposition,and the eff ect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric propertiesof Zr x Al 1−x O y fi lms is analyzed by Atomic force microscopy, X-ray diff raction, X-ray photoelectron spectroscopy andcapacitance-frequency measurement. The eff ect of Zr concentrations of Zr x Al 1-x O y gate insulator on the electrical propertyand stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is fi rstlyinvestigated. Under NBIS and TS, the much better stability of ZTO TFTs with Zr x Al 1−x O y fi lm as a gate insulator is due tothe suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeationat the ZTO/Zr x Al 1−x O y interface. It provides a new strategy to fabricate the low consumption and high stability ZTOTFTs for application.

참고문헌 (3)

참고문헌 신청

한동석 / 2015 / Highly stable hafniumetinezinc oxide thin film transistors with stacked bilayer active layers / Current Applied Physics 15(2):94~97

최원석 / 2014 / Control of electrical properties and gate bias stress stability in solution-processed a-IZO TFTs by Zr doping / Current Applied Physics 14(12):1831~1836

이상훈 / 2014 / Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition / Current Applied Physics 14(4):552~557

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