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논문 기본 정보

자료유형
학술저널
저자정보
Min-Woo Jeong (Department of Materials Science and Engineering Seoul) Sekwon Na (Seoul National University) Haishan Shin (Sungkyunkwan University) Hong-Bum Park (Seoul National University) Hoo-Jeong Lee (Sungkyunkwan University) Young-Chang Joo (Seoul National University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.14 No.4
발행연도
2018.1
수록면
426 - 431 (6page)

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Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situthermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes graduallyat approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmissionelectron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the Eg2 Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomicdistance of the van der Waals bonds with the formation of (00l) oriented layered-structure grain. The decreased number ofdefects in the layer structure affects the electrical and thermal properties of the Bi2Te3thin film. Due to the microstructuralevolution, the power factor of Bi2Te3was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3formed during the annealing process, which contributed to a better understanding of the performance enhancement via postannealingand to research on other highly oriented layer structure materials.

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