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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.1
- 수록면
- 324 - 330 (7page)
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The detection of spin current injected from the ferromagnet source to the semiconductor channel is very challenging due tothe low injection effi ciency at the interface. Especially, it is diffi cult to detect the spin precession signal in a strong Rashbasystem without a signal decay. In a semiconductor system, the spin Hall angle is much larger than the spin injection effi ciency,so the spin Hall eff ect is utilized for room temperature operation of the semiconductor-based Rashba devices. To realize spintransport device induce by the spin-charge and charge-spin conversions, the direct spin Hall eff ect (DSHE) and the inversespin Hall eff ect (ISHE) are adopted, respectively. The spin current is clearly detected up to room temperature and the spintransport signal agrees to the temperature dependence of the Rashba eff ect. From these spin transport signals, we suggestanother option to extract Rashba parameters from cryogenic temperature to room temperature. The both signals of DSHEand ISHE also confi rm the Onsager Reciprocity in a Rashba system.
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참고문헌 (33)
참고문헌 신청
Lou, X. / 2007 / Electrical detection of spin transport in lateral ferromagnet-semiconductor devices / Nat. Phys 3:197~202
Koo, H. C. / 2009 / Control of spin precession in a spin-injected fi eld eff ect transistor / Science 325:1515~1518
Fert, A. / 2001 / Conditions for effi cient spin injection from a ferromagnetic metal into a semiconductor / Phys. Rev. B 64:184420
Schmidt, G. / 2000 / Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diff usive semiconductor / Phys. Rev. B 62:R4790~R4793
Hirsch, J. E. / 1999 / Spin hall eff ect / Phys. Rev. Lett 83:1834~1837
Koo, H. C. / 2009 / Control of spin precession in a spin-injected fi eld eff ect transistor / Science 325:1515~1518
Fert, A. / 2001 / Conditions for effi cient spin injection from a ferromagnetic metal into a semiconductor / Phys. Rev. B 64:184420
Schmidt, G. / 2000 / Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diff usive semiconductor / Phys. Rev. B 62:R4790~R4793
Hirsch, J. E. / 1999 / Spin hall eff ect / Phys. Rev. Lett 83:1834~1837
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