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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.1
- 수록면
- 654 - 662 (9page)
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We studied the improvement of interfacial stability and contact resistance by applying Cu with high electrical conductivitybut high diffusivity to thin film type thermoelectric devices. Since the thin film device has a large surface to volume ratio, itis necessary to minimize the contact resistance occurring at the interface in order to minimize heat generation due to resistance. For the reliability of such a device, long duration phase stability is required, especially when using Cu electrodes withhigh diffusivity. The interconnect system, including Cu and the barrier materials, was selected based on a phase diagram witha thermodynamic-based calculation. The interlayer was required to improve the unstable interface to prevent the reactionof Cu and Bi2Te3. Ta and Mo, which are low diffusivity materials, were selected as candidates. Thermodynamic calculationresults showed that Ta has a stable interface with Bi2Te3,while Mo reacts with Te. The calculation was confirmed byexperiments, and it was determined that the longer the annealing process, the higher the contact resistance is when the Mointerlayer is applied, which is in accordance with the thermodynamic calculation. The thermodynamic calculations are auseful methodology when selecting materials with a stable interface with highly reactive chalcogenide materials.
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