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논문 기본 정보

자료유형
학술저널
저자정보
Sungho Lee (Konkuk University) Jiyoung Jang (Konkuk University) Ho Sang Jung (Konkuk University) Won Nam Kang (Sungkyunkwan University) Sang Young Lee (Konkuk University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.15 No.5
발행연도
2019.1
수록면
572 - 581 (10page)

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Nb is a very popular material in superconductive electronic devices such as superconducting single-photon detectors andradio-frequency (RF) cavities for particle accelerators. Before MgB2can be used as a substitute material, the stability of itsproperties over time must be confirmed. We studied how ageing over a period of 514 weeks affected the microwave surfaceresistance (RS) and the normal-state resistivity (ρ) of epitaxially-grown MgB2films. MgB2films with thicknesses of 1.0 μmand 1.7 μm were prepared using the hybrid physical CVD method, and exhibited a critical temperature (TC) of 39 K. Theywere stored in low-vacuum to prevent reactions with humidity, except when the films were taken out of storage for measurementpurposes. Variation in RS with the ageing period appeared to be significant at very low temperatures. The RS valuesof 1.0 μm-thick and 1.7 μm-thick MgB2films increased by ~ 8 times and ~ 3 times, respectively, over ~ 10 years. The agedMgB2films appeared to have reduced π-band gap energy values. The pristine MgB2films value of 2.3 meV was reducedto 1.3–1.7 meV over ~ 10 years. The TC of the MgB2films remained almost the same regardless of the ageing time. Theenhanced RS and ρ in the aged MgB2films were attributed to increased intraband scattering within the π-band and the σ-band.

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