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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전자파학회JEES Journal of Electromagnetic Engineering And Science Journal of Electromagnetic Engineering And Science Vol.14 No.4
- 발행연도
- 2014.12
- 수록면
- 411 - 414 (4page)
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초록· 키워드
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A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the 0.18-㎛ SiGe HBT process, taking up an area of 0.3 mm².
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. THE PROPOSED SPDT RF SWITCH
Ⅲ. SIMULATION AND MEASUREMENT RESULTS
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (5)
참고문헌 신청
1. [학술지(정기간행물)] - C. Huynh / 2011 / New ultra-high-isolation RF switch architecture and its use for a 10–38-GHz 0. 18-μm BiCMOS ultra-wideband switch / IEEE Transactions on Microwave Theory and Techniques 59 (2) : 345 ~ 353
2. [학술지(정기간행물)] - J. Rascher / 2012 / Highly linear robust RF switch with low insertion loss and high power handling capability in a 65nm CMOS technology / IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2012) : 21 ~ 24
3. [학술대회논문] - M. C. Yeh / 2005 / A miniature low-insertion-loss, high-power CMOS SPDT switch using floating-body technique for 2.4- and 5.8-GHz applications / IEEE Radio Frequency Integrated Circuits (RFIC)Symposium : 451 ~ 454
4. [학술대회논문] - A. Madan / 2010 / A high-linearity inverse-mode SiGe BiCMOS RF switch / IEEE Bipolar/BiCMOS Circuits Technology Meeting : 61 ~ 64
5. [학술대회논문] - N. A. Shairi / 2011 / Design and analysis of broadband high isolation of discrete packaged PIN diode SPDT switch for wireless data communication / IEEE International RF and Microwave Conference : 91 ~ 94
2. [학술지(정기간행물)] - J. Rascher / 2012 / Highly linear robust RF switch with low insertion loss and high power handling capability in a 65nm CMOS technology / IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2012) : 21 ~ 24
3. [학술대회논문] - M. C. Yeh / 2005 / A miniature low-insertion-loss, high-power CMOS SPDT switch using floating-body technique for 2.4- and 5.8-GHz applications / IEEE Radio Frequency Integrated Circuits (RFIC)Symposium : 451 ~ 454
4. [학술대회논문] - A. Madan / 2010 / A high-linearity inverse-mode SiGe BiCMOS RF switch / IEEE Bipolar/BiCMOS Circuits Technology Meeting : 61 ~ 64
5. [학술대회논문] - N. A. Shairi / 2011 / Design and analysis of broadband high isolation of discrete packaged PIN diode SPDT switch for wireless data communication / IEEE International RF and Microwave Conference : 91 ~ 94
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