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- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.2
- 수록면
- 208 - 208 (1page)
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We observed electrical characteristics of IZO TFT with silicon. The activation layer was formed by a spin-coating method. The value of on/off ratio increased from 1.6 × 10<sup>3</sup> to 2.4 × 10<sup>4</sup>, S.S. decreased from 2.69 V/dec to 0.43 V/dec, and V<sub>T</sub> shifted positive from -2.04 V to -1. ... 전체 초록 보기
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