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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.6
- 발행연도
- 2020.12
- 수록면
- 552 - 557 (6page)
- DOI
- 10.5573/JSTS.2020.20.6.552
이용수
초록· 키워드
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The novel AlGaN-based ultraviolet light-emitting diode (UV-LED) with a tunneling enhancement structure is proposed. The tunneling enhanced structure consists of an ITO layer, an extremely thin AlN layer, and a p+-GaN layer. Under forward bias, compared to traditional devices, tunneling enhanced UV-LEDs can shorten the width of the tunneling region. In addition, the dielectric constant of the AlN layer in the tunnel area is small, which can effectively increase the transport of holes from the ITO layer to the MQWs active region. Due to the increased hole concentration and drift speed, for a 300 ㎛ × 254 ㎛ UV-LED chip, the optical output power increased by 19.6% at 120 ㎃. Therefore, the proposed tunneling enhanced structure provides a simple and effective way to increase the light output power of UV-LEDs.
목차
Abstract
I. INTRODUCTION
II. STRUCTURES AND PARAMETERS
III. RESULTS AND DISCUSSION
V. CONCLUSIONS
REFERENCES
참고문헌 (26)
참고문헌 신청
H.-S. Cheong, et al., “Growth and Characteristics of Near-UV LED Structures on Wet-Etched Patterned Sapphire Substrate,” J. Semicond. Technol. Sci., Vol. 6, Issue 3, pp. 199-205, 2006.
S.Y. Kim, et al., “Enhanced Hole Injections in Organic Light Emitting Diode using Rhodium Oxide Coated Anode,” J. Semicond. Technol. Sci., Vol. 5, Issue 2, pp. 77-82, 2005.
A. Khan, et al., “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics, Vol. 2, Issue 2, pp. 77-84, 2008.
H. Hirayama, et al., “Recent Progress in AlGaNBased Deep?UV LEDs,” Electron Commun Jpn, Vol. 98, Issue 5, pp. 1-8, 2015.
H. Tao, et al., “Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping,” IEEE Trans. Electron Dev, Vol. 66, Issue 1, pp. 478-484, 2019.
S.Y. Kim, et al., “Enhanced Hole Injections in Organic Light Emitting Diode using Rhodium Oxide Coated Anode,” J. Semicond. Technol. Sci., Vol. 5, Issue 2, pp. 77-82, 2005.
A. Khan, et al., “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics, Vol. 2, Issue 2, pp. 77-84, 2008.
H. Hirayama, et al., “Recent Progress in AlGaNBased Deep?UV LEDs,” Electron Commun Jpn, Vol. 98, Issue 5, pp. 1-8, 2015.
H. Tao, et al., “Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping,” IEEE Trans. Electron Dev, Vol. 66, Issue 1, pp. 478-484, 2019.
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