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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.29 No.6
- 발행연도
- 2020.11
- 수록면
- 176 - 179 (4page)
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초록· 키워드
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We investigated the control of the charge carrier density of black phosphorus (BP) 2D nanosheets in a rapid plasma doping process. The electronic structure of plasma boron-doped BP was investigated using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The characteristics of a doped BP device were evaluated by fabricating a field-effect transistor under spatially controlled doping in BP nanosheets. The results confirmed the incorporation of ionized boron through the plasma doping process, resulting in the donation of strongly electron dope (electron mobility: ~275 ㎠/V·s) on the boron-doped BP switching device. In particular, the fabricated p–n homojunction of the BP device showed an excellent photodetection behavior. This work provides a rapid and stable plasma doping technique for two-dimensional nanosheets employed in next-generation electronic and optoelectronic devices.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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