Optical Characterizations of TlBr Single Crystals for Radiation Detection Applications

Oh, Joon-Ho; Kim, Dong Jin; Kim, Han Soo; Lee, Seung Hee; Ha, Jang Ho

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자료유형: 학술저널

저자정보: Oh, Joon-Ho (Korea Atomic Energy Research Institute) Kim, Dong Jin (Korea Atomic Energy Research Institute) Kim, Han Soo (Korea Atomic Energy Research Institute) Lee, Seung Hee (Korea Atomic Energy Research Institute) Ha, Jang Ho (Korea Atomic Energy Research Institute)

저널정보: 대한방사선방어학회 방사선방어학회지 방사선방어학회지 제41권 제2호

발행연도: 2016.1

수록면: 167 - 171 (5page)

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Background: TlBr is of considerable technological importance for radiation detection applications where detecting high-energy photons such as X-rays and ${\gamma}$-rays are of prime importance. However, there were few reports on investigating optical properties of TlBr itself for deeper understandings of this material and for making better radiation detection devices. Thus, in this paper, we report on the optical characterizations of TlBr single crystals. Spectroscopic ellipsometry (SE) and photoluminescence (PL) measurements at RT were performed for this work. Materials and Methods: A 2-inch TlBr single crystalline ingot was grown by using the vertical Bridgman furnace. SE measurements were performed at RT within the photon energy range from 1.1 to 6.5 eV. PL measurements were performed at RT by using a home-made PL system equipped with a 266 nm-laser and a spectrometer. Results and Discussion: Dielectric responses from SE analysis were shown to be slightly different among the different samples possibly due to the different structural/optical properties. Also from the PL measurements, it was observed that the peak intensities of the middle samples were significantly higher than those of the other two samples. With the given values for permittivity of free space (${\varepsilon}_0=8.854{\times}10^{-12}F{\cdot}m^{-1}$), thickness (d = 1 mm), and area ($A=10{\times}10mm^2$) of the TlBr sample, capacitances of TlBr were 6.9 pF (at $h{\nu}=3eV$) and 4.4 pF (at $h{\nu}=6eV$), respectively. Conclusion: SE and PL measurement and analysis were performed to characterize TlBr samples from the optical perspective. It was observed that dielectric responses of different TlBr samples were slightly different due to the different material properties. PL measurements showed that the middle sample exhibited much stronger PL emission peaks due to the better material quality. From the SE analysis, optical, dielectric constants were extracted, and calculated capacitances were in the few pF range.

#Radiation detectors #Semiconductor single crystals #Spectroscopic ellipsometry #Photoluminescence

참고문헌 (15)

참고문헌 신청

Kostamo P / 2009 / Characterization of TlBr for X-ray and γ-ray detector applications / Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip 607:129~131

Kouznetsov MS / 2004 / Development of the technology for growing TlBr detector crystals / Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip 531:174~180

Hitomi K / 2001 / Characterization of thallium bromide crystals for radiation detector applications / J. Cryst. Growth 225:129~133

Hitomi K / 2007 / Influence of zone purification process on TlBr crystals for radiation detector fabrication / Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip 579:153~156

Kim DJ / Characteristics of TlBr single crystals grown using the vertical Bridgman–Stockbarger method for semiconductor-based radiation detector applications / Mater. Sci

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