지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2011.1
- 수록면
- 21 - 23 (3page)
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Uniformity of plasma etching processes critically depends on the wafer temperature and its distribution. The wafer temperature is affected by plasma, chucking force, He back side pressure and the surface temperature of ESC(electrostatic chuck). In this work, 3D mathematical modeling is used to investigate the influence of the geometry of coolant path and the temperature distribution of the ESC surface. The model that has the coolant path with less change of the cross-sectional area and the curvature shows low standard deviation of the ESC surface temperature distribution than the model with the coolant path of the larger surface area and more geometric change.
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참고문헌 (5)
참고문헌 신청
Kiihanmaki, J / 1999 / Deep Silicon Etching in inductively Coupled Plasma Reactor for MEMS / Phisica Scpita T79
Tretheway, D / 1996 / Modeling of Heat Transport and Wafer Heaing Effects during Plasma Etching / J. Electrochem. Soc 143:3674~3680
Samir, T / 2003 / Improving Wafer Temperature Uniformity for Etch Applications
Daviet, J / 1993 / Heat Transfer in a Microelectronics Plasma Reactor / J. Appl. Phys 73:1471~1479
Kelkar, U.M. / 1999 / Diagnostics and modeling in a pure argon plasma: Energy balance study / J. Vac. Sci. Technol A17:125~132
Tretheway, D / 1996 / Modeling of Heat Transport and Wafer Heaing Effects during Plasma Etching / J. Electrochem. Soc 143:3674~3680
Samir, T / 2003 / Improving Wafer Temperature Uniformity for Etch Applications
Daviet, J / 1993 / Heat Transfer in a Microelectronics Plasma Reactor / J. Appl. Phys 73:1471~1479
Kelkar, U.M. / 1999 / Diagnostics and modeling in a pure argon plasma: Energy balance study / J. Vac. Sci. Technol A17:125~132
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