지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.1
- 수록면
- 131 - 135 (5page)
이용수
초록· 키워드
오류제보하기
This paper analyses the degradation of the optical, electrical, and thermal characteristics of InGaN/GaN-based light-emitting diodes (LEDs) with different chip sizes. Their optical, electrical, and thermal characteristics were periodicity-monitored during the test. The small chip showed an increase in ideality factor and high series resistance. This led to the degradation of the electrical characteristic, and hence to high thermal resistance, finally resulting in low light output power. In the large chip, the high operating current made the junction temperature high. This, together with the thermal degradation on the LED surface and metal pad, led to a decrease in light output power. In the middle chip, the optical and electrical degradation ratio was lower than that in the other samples and, therefore, the light output power decreased to a lesser degree.
목차
등록된 정보가 없습니다.
참고문헌 (22)
참고문헌 신청
이 논문의 저자 정보
최근 본 자료
댓글(0)
0