지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
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Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.
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참고문헌 (17)
참고문헌 신청
K. K. Kim / 1998 / IEEE Trans. Electron. Dev 45:598
S. -H. Shin / 2001 / J. Kor. Phys. Soc 39:112
T. Hamamoto / 1995 / Tech. Digest 915
S.H. Shin / 2003 / Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM / Journal of the Korean Physical Society 43(51):887~891
J. W. Kim / 2008 / in Proceedings of the 15th Korean Conference on Semiconductors :FP2~FP33
S. -H. Shin / 2001 / J. Kor. Phys. Soc 39:112
T. Hamamoto / 1995 / Tech. Digest 915
S.H. Shin / 2003 / Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM / Journal of the Korean Physical Society 43(51):887~891
J. W. Kim / 2008 / in Proceedings of the 15th Korean Conference on Semiconductors :FP2~FP33
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