지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
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We investigated cleaning effects using $NH_4OH$ solution on the surface of Cu film. A 20 nm Cu film was deposited on Ti / p-Si (100) by sputter deposition and was exposed to air for growth of the native Cu oxide. In order to remove the Cu native oxide, an $NH_4OH$ cleaning process with and without TS-40A pre-treatment was carried out. After the $NH_4OH$ cleaning without TS-40A pretreatment, the sheet resistance Rs of the Cu film and the surface morphology changed slightly(${\Delta}Rs:{\sim}10m{\Omega}/sq.$). On the other hand, after $NH_4OH$ cleaning with TS-40A pretreatment, the Rs of the Cu film changed abruptly (${\Delta}Rs:till{\sim}700m{\Omega}/sq.$); in addition, cracks showed on the surface of the Cu film. According to XPS results, Si ingredient was detected on the surface of all Cu films pretreated with TS-40A. This Si ingredient(a kind of silicate) may result from the TS-40A solution, because sodium metasilicate is included in TS-40A as an alkaline degreasing agent. Finally, we found that the $NH_4OH$ cleaning process without pretreatment using an alkaline cleanser containing a silicate ingredient is more useful at removing Cu oxides on Cu film. In addition, we found that in the $NH_4OH$ cleaning process, an alkaline cleanser like Metex TS-40A, containing sodium metasilicate, can cause cracks on the surface of Cu film.
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