지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
오류제보하기
Zinc oxide as an optoelectronic device material was studied to utilize its wide band gap of 3.37 eV and high exciton biding energy of 60 meV. Using anti-site nitrogen to generate p-type zinc oxide has shown a deep acceptor level and low solubility. To increase the nitrogen solubility in zinc oxide, group 13 elements (aluminum, gallium, and indium) was co-added to nitrogen. The effect of aluminum on nitrogen solubility in a $3{\times}3{\times}2$ zinc oxide super cell containing 72 atoms was investigated using density functional theory with hybrid functionals of Heyd, Scuseria, and Ernzerhof (HSE). Aluminum and nitrogen were substituted for zinc and oxygen sites in the super cell, respectively. The band gap of the undoped super cell was calculated to be 3.36 eV from the density of states, and was in good agreement with the experimentally obtained value. Formation energies of a nitrogen molecule and nitric oxide in the zinc oxide super cell in zinc-rich conditions were lower than those in oxygen-rich conditions. When the number of nitrogen molecules near the aluminum increased from one to four in the super cell, their formation energies decreased to approach the valence band maximum to some degree. However, the acceptor level of nitrogen in zinc oxide with the co-incorporation of aluminum was still deep.
목차
등록된 정보가 없습니다.
참고문헌 (38)
참고문헌 신청
D. C. Look / 2001 / Mater. Sci. Eng. B 80:383
Jae-Hong Lim / 2009 / Transparent Phosphorus Doped ZnO Ohmic Contact to GaN Based LED / 한국재료학회지 19(8):417~420
Jae-Hong Lim / 2009 / Highly Transparent Indium Oxide Doped ZnO Spreading Layer for GaN Based Light Emitting Diodes / 한국재료학회지 19(8):443~446
H. Zeng / 2010 / Adv. Funct. Mater 20:561
J. S. Jie / 2006 / Nano Lett 6:1887
Jae-Hong Lim / 2009 / Transparent Phosphorus Doped ZnO Ohmic Contact to GaN Based LED / 한국재료학회지 19(8):417~420
Jae-Hong Lim / 2009 / Highly Transparent Indium Oxide Doped ZnO Spreading Layer for GaN Based Light Emitting Diodes / 한국재료학회지 19(8):443~446
H. Zeng / 2010 / Adv. Funct. Mater 20:561
J. S. Jie / 2006 / Nano Lett 6:1887
이 논문의 저자 정보
최근 본 자료
댓글(0)
0