p-Si 기판에 성장한 BaTiO 박막의 어닐링온도와 구조적 특성과의 관계

민기득; 김동진; 이종원; 박인용; 김규진

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자료유형: 학술저널

저자정보: 민기득 (한국원자력연구원 원자력재료연구부) 김동진 (한밭대학교 신소재공학부) 이종원 (한밭대학교 신소재공학부) 박인용 (한밭대학교 신소재공학부) 김규진 (휴먼일렉스[주])

저널정보: 한국재료학회 한국재료학회지 한국재료학회지 제18권 제4호

발행연도: 2008.1

수록면: 222 - 227 (6page)

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In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.

#$BaTiO_3$ thin film #$BaTiO_3$ sputtering #$BaTiO_3$ Raman #$BaTiO_3$ XPS #$BaTiO_3$ GDS

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