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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2011.1
- 수록면
- 51 - 55 (5page)
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초록· 키워드
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The surface passivation is one of the important methods that can improve the efficiency of solar cells and can be classified into two methods: wet-chemical passivation and film passivation. In this paper, chemical HF treatment were employed for the passivation of n-type silicon wafers and their effects were studied. To investigate film passivation effects, the silicon nitride films were also deposited by PECVD (plasma-enhanced chemical vapor deposition) on n-type silicon wafers treated with chemical HF. The minority carrier lifetime measurements were used for evaluation of the passivation characteristics in the all experiments steps. We confirmed that the minority carrier lifetime was improved with chemical HF treatment due to passivation effects by H-termination.
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참고문헌 (12)
참고문헌 신청
Korea Institute of Energy Research / 2011 / 2011 workshop of association for research on PV :1~122
Korea Photovoltaic Industry Association / 2011 / PV World Forum 2011: 1st Day – Conference Data Book / Infothe :9~188
Kim, Y. H / 2009 / Introduction to Solar Cell Production / Dooyangsa :9~313
PVCDROM
Florence W. Chen / 2006 / PECVD silicon nitride surface passivation for high-efficiency n-type silicon solar cells / IEEE 4th WCPEC :1020~1023
Korea Photovoltaic Industry Association / 2011 / PV World Forum 2011: 1st Day – Conference Data Book / Infothe :9~188
Kim, Y. H / 2009 / Introduction to Solar Cell Production / Dooyangsa :9~313
PVCDROM
Florence W. Chen / 2006 / PECVD silicon nitride surface passivation for high-efficiency n-type silicon solar cells / IEEE 4th WCPEC :1020~1023
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