fabrication of Zirconia Thin Films by Plasma Enhanced Metal-Organic Chemical Vapor Deposition

김기동; 조영아; 신동근; 전진석; 최동수; 박종진

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자료유형: 학술저널

저자정보: 김기동 (한국가스공사 연구개발원) 조영아 (한국가스공사 연구개발원) 신동근 (한양대학교 금속재료공학과) 전진석 (한국가스공사 연구개발원) 최동수 (한국가스공사 연구개발원) 박종진 (한양대학교 금속재료공학과)

저널정보: 한국재료학회 한국재료학회지 한국재료학회지 제9권 제2호

발행연도: 1999.1

수록면: 155 - 162 (8page)

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Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$</TEX> precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.

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주요연구분야 공학 > 건축공학 > 환경공학 공학 > 재료·에너지공학 > 재료공학

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