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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국재료학회 Fabrication and Characterization of Advanced Materials Fabrication and Characterization of Advanced Materials 제1권 제1호
- 발행연도
- 1995.1
- 수록면
- 3 - 9 (7page)
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초록· 키워드
오류제보하기
Low temperature formation of high integrity thin films was realized by accurately controlled low energy ion bombardment process. Low energy ion bombardment at the surface activated a few layers of the surface atoms and resulted in low temperature growth of thin films. This process was realized by two kind of plasma process equipment. One is RF-DC coupled mode bias-sputtering system and the other is dual-frequency excitation plasma process equipment. In these plasma process equipment, ion energy and ion flux can be controlled accurately and independently, and as a result, Si epitaxy at a temperature of $300^{\circ}C$ and highly reliable giant-grain Cu film formation were established by the RF-DC coupled mode bias-sputtering system and high integrity gate oxide film formation was realized at a temperature of $450^{\circ}C$ by the dual-frequency excitation plasma process equipment. This indicates that advanced plasma process with accurately controlled ion flux and energy is essential for ULSI fabrication where accurately controlled plasma parameters are needed.
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