Synthesis of High-quality Graphene by Inductively-coupled Plasma-enhanced Chemical Vapor Deposition

Lam, Van Nang; Kumar, Challa Kiran; Park, Nam-Kyu; Arepalli, Vinaya Kumar; Kim, Eui-Tae

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자료유형: 학술대회자료

저자정보: Lam, Van Nang (Department of Materials Science & Engineering, Chungnam National University) Kumar, Challa Kiran (Department of Materials Science & Engineering, Chungnam National University) Park, Nam-Kyu (Department of Materials Science & Engineering, Chungnam National University) Arepalli, Vinaya Kumar (Department of Materials Science & Engineering, Chungnam National University) Kim, Eui-Tae (Department of Materials Science & Engineering, Chungnam National University)

저널정보: 한국재료학회 한국재료학회 학술발표대회 한국재료학회 2011년도 추계학술발표대회

발행연도: 2011.1

수록면: 162 - 162 (1page)

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이 논문의 연구 히스토리 (2)

2012

High-Quality Graphene Films Synthesized by Inductively-Coupled Plasma-Enhanced Chemical Vapor Deposition

Lam , Van Nang , Pa 외 4명 한국재료학회 학술발표대회 2012.01 학술대회자료

2011

Synthesis of High-quality Graphene by Inductively-coupled Plasma-enhanced Chemical Vapor Deposition

Lam , Van Nang , Kuma 외 10명 한국재료학회 학술발표대회 2011.01 학술대회자료

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Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

#Graphene #ICP-CVD

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