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논문 기본 정보

자료유형
학술저널
저자정보
Junghoon Joo (Kunsan National University)
저널정보
한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.23 No.4
발행연도
2014.7
수록면
179 - 186 (8page)

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초록· 키워드

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Fluid model based numerical simulation was carried out for an inductively coupled plasma assisted sputter deposition system. Power absorption, electron temperature and density distribution was modeled with drift diffusion approximation. Effect of an electrically conducting substrate was analyzed and showed confined plasma below the substrate. Part of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality based compact model and Poisson equation resolved model showed more broadened profile in inductively coupled plasma power absorption than quasi-neutrality case, but very similar Ar ion number density profile. Electric potential was calculated to be in the range of 50 V between a Cr rod source and a conductive substrate. A new model including Cr sputtering by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be ionized by direct electron impact and showed narrower distribution than Ar ions.

목차

Ⅰ. Introduction
Ⅱ. Numerical model setup
Ⅲ. Simulation results and discussion
Ⅳ. Conclusion
References

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