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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.23 No.1
- 발행연도
- 2014.1
- 수록면
- 34 - 39 (6page)
이용수
초록· 키워드
오류제보하기
The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped Ge₂Sb₂Te? (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than 200℃. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.
목차
I. Introduction
II. Experimental Procedures
III. Results and Discussion
IV. Conclusions
References
참고문헌 (16)
참고문헌 신청
1. [학술지(정기간행물)] - K. N. Chen / 2008 / / IEEE Electron Device Lett 29 : 131 ~
2. [학술지(정기간행물)] - S. -Y. Lee / 2012 / / J. Non-Cryst. Solids 358 : 2405 ~
3. [기타자료] - T. Lowrey / 2013 / US Patent US 8379439 B2
4. [기타자료] - S. Y. Lee / 2010 / US Patent US 20100148141 A1
5. [학술지(정기간행물)] - J. Wang / 1999 / / IEEE Trans. Nucl. Sci 46 : 1728 ~
2. [학술지(정기간행물)] - S. -Y. Lee / 2012 / / J. Non-Cryst. Solids 358 : 2405 ~
3. [기타자료] - T. Lowrey / 2013 / US Patent US 8379439 B2
4. [기타자료] - S. Y. Lee / 2010 / US Patent US 20100148141 A1
5. [학술지(정기간행물)] - J. Wang / 1999 / / IEEE Trans. Nucl. Sci 46 : 1728 ~
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