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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.6 No.2
- 발행연도
- 2002.6
- 수록면
- 88 - 91 (4page)
이용수
초록· 키워드
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InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic chemical vapor deposition and their structural and optical properties were studied. When the average In content was increased by increasing TMIn flow rate, PL measurement showed little change in PL peak position and large increase in PL intensity instead. Large changes in PL peak position could be achieved by changing growth temperature. We propose the formation of fixed In content, highly In-rich quantum dot-like phases in InGaN MQWs driven by spinodal decomposition.
목차
Abstract
1. Introduction
2. Experimental and Simulation Details
3. Results and Discussion
4. Conclusions
Acknowledgements
References
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