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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.6 No.2
- 발행연도
- 2002.6
- 수록면
- 71 - 75 (5page)
이용수
초록· 키워드
오류제보하기
GaAs polycrystalline thin films with good performance were prepared on conducting glass by hot wall epitaxy (HWE), which were used for solar cell. Electron probe micro-analyzer (EPMA) was applied for the composition, morphology of surface and cross-section of grown films, and X-ray diffraction (XRD) for their phase structure; Raman scattering spectrum (RSS) and photoluminescence (PL) were used for evaluating their optical characteristics. The results show that, there is textured structure on the surface of grown GaAs polycrystalline films, which is greatly promised to be suitable for the candidate of solar cell with low cost and high efficiency. It is concluded that the source and substrate at temperature of 900~930℃ and 500℃ respectively would be beneficial for such films.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiment
Ⅲ. Results and Discussion
Ⅳ. Conclusion
Acknowledgements
References
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