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This paper reports the effects of post-annealing of ZnO thin fi lms on their microstructure and the device performance of the transistors fabricated from the films. From X-ray diffraction and transmission electron microscopy characterization, we uncovered that the grain size increased with the annealing temperature escalating and that the film stress shifted from compressive to tensile due to the grain size increment. Electrical characterization revealed that the grain size increase damaged the device performance by drastically lifting the off-current level. By annealing the devices in an O2 ambient (instead of air), we were able to suppress the off-current while improving the electron mobility.
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참고문헌 신청
Bae H S / 2003 / Photodetecting properties of ZnO-based thin-fi lm transistors / Appl. Phys. Lett 83 : 5313 ~
Carcia P F / 2003 / Transparent ZnO thin-fi lm transistor fabricated by rf magnetron sputtering / Appl. Phys. Lett 82 : 1117 ~
Cebulla R / 1998 / Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: relationships between plasma parameters and structural and
Fortunato E / 2005 / Fully transparent ZnO thin-film transistor produced at room temperature / Adv. Mater 17 : 590 ~
Hoffman R L / 2003 / ZnO-based transparent thin-fi lm transistors / Appl. Phys. Lett 82 : 733 ~
Carcia P F / 2003 / Transparent ZnO thin-fi lm transistor fabricated by rf magnetron sputtering / Appl. Phys. Lett 82 : 1117 ~
Cebulla R / 1998 / Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: relationships between plasma parameters and structural and
Fortunato E / 2005 / Fully transparent ZnO thin-film transistor produced at room temperature / Adv. Mater 17 : 590 ~
Hoffman R L / 2003 / ZnO-based transparent thin-fi lm transistors / Appl. Phys. Lett 82 : 733 ~
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