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자료유형
학술저널
저자정보
저널정보
한국전기전자재료학회 전기전자재료학회논문지 전기전자재료학회논문지 제22권 제11호
발행연도
2009.1
수록면
941 - 948 (8page)

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The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-Bi2O3-Sb2O3 (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore (Zn2Bi3Sb3O14) was decomposed more than 100℃ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of Zn7Sb2O12 spinel (α and β), microstructure of ZBSN (Sb/Bi=0.5) composed of α-spinel was more homogeneous than Sb/Bi≥1.0 composed of β-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient α = 6∼11) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

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