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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제14권 제6호
- 발행연도
- 2013.1
- 수록면
- 329 - 333 (5page)
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SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the H2O group, and lowering of the polarity
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참고문헌 (15)
참고문헌 신청
Damayanti, J. Widodo / 2005 / / aterials, Science and Engineering B 121 : 193 ~
Dongsik Kong / 2011 / Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors / Journal
Hosono, H / 2006 / / Journal of Non-Crystalline Solids 352 : 851 ~ 858
J. Frenkel / 1938 / / Phys. Rev 54 : 647 ~ 648
J. S. Park / 2012 / / Thin Solid Films 520 : 1679 ~
Dongsik Kong / 2011 / Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors / Journal
Hosono, H / 2006 / / Journal of Non-Crystalline Solids 352 : 851 ~ 858
J. Frenkel / 1938 / / Phys. Rev 54 : 647 ~ 648
J. S. Park / 2012 / / Thin Solid Films 520 : 1679 ~
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