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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제13권 제6호
- 발행연도
- 2012.1
- 수록면
- 287 - 291 (5page)
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We investigated the etching characteristics of TaN thin films in an O2/BCl3/Cl2/Ar gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to SiO2 were obtained as 172.7nm/min and 6.27 in the O2/BCl3/Cl2/Ar (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy.
Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.
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