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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제12권 제2호
- 발행연도
- 2011.1
- 수록면
- 60 - 63 (4page)
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We investigated the etching characteristics of zinc oxide (ZnO) and the effect of additive gases in a Cl2-based inductively coupled plasma. The inert gases were argon, nitrogen, and helium. The maximum etch rates were 44.3,39.9, and 37.9 nm/min for Cl2(75%)/Ar(25%), Cl2(50%)/N2(50%), and Cl2(75%)/He(25%) gas mixtures, 600 W radiofrequency power, 150 W bias power, and 2 Pa process pressure. We obtained the maximum etch rate by a combination of chemical reaction and physical bombardment. A volatile compound of Zn-Cl. achieved the chemical reaction on the surface of the ZnO thin films. The physical etching was performed by inert gas ion bombardment that broke the Zn-O bonds. The highly oriented (002) peak was determined on samples, and the (013) peak of Zn_2SiO_4 was observed in the ZnO thin film sample based on x-ray diffraction spectroscopy patterns. In addition, the sample of Cl_2/He chemistry showed a high full-width at half-maximum value. The root-mean-square roughness of ZnO thin films decreased to 1.33 nm from 5.88 nm at Cl_2(50%)/N_2(50%) plasma chemistry.
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