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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제12권 제1호
- 발행연도
- 2011.1
- 수록면
- 7 - 10 (4page)
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초록· 키워드
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High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor.
Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).
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참고문헌 (5)
참고문헌 신청
D. Moncoqut / 1996 / / Proceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting : 216 ~
J. Olsson / 1999 / / IEEE International Conference on Microelectronic Test Structures : 135 ~
T. Myono / 2000 / / IEICE Trans. Fund. Electron. Comm. Comput. Sci 412
W. Liu / 1999 / BSIM3v3.2.2 MOSFET Model Users’ Manual / University of California
Y. S. Kim / 1991 / / IEEE Trans. Electron Devices 38 (1641)
J. Olsson / 1999 / / IEEE International Conference on Microelectronic Test Structures : 135 ~
T. Myono / 2000 / / IEICE Trans. Fund. Electron. Comm. Comput. Sci 412
W. Liu / 1999 / BSIM3v3.2.2 MOSFET Model Users’ Manual / University of California
Y. S. Kim / 1991 / / IEEE Trans. Electron Devices 38 (1641)
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