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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제13권 제1호
- 발행연도
- 2012.1
- 수록면
- 27 - 30 (4page)
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This paper proposes a micro gas sensor for measuring H2S gas. This is based on a SnO2-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The SnO2-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace.
To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers.
The sensitivities are measured by applying H2S gas. It has a concentration of 1 ppm at an operating temperature of 270℃. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of H2S gas is approximately 68%.
This is approximately 12% more than that of a sensor with one-layer.
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