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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2008.1
- 수록면
- 213 - 216 (4page)
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초록· 키워드
오류제보하기
The voltages for pixel electrodes on LCD panels are supplied with analog voltages from LCD Driver ICs (LDIs). The latest LDI developed for large LCD TV’s has suffered from the degradation of analog output characteristics (target voltage: AVO and output voltage deviation: dVO). By the failure analysis, humps in ID -VG curves have been observed in high voltage (HV) NMOS devices for input transistors in amplifiers. The hump is investigated to be the main cause of the deviation for the driving current in HV NMOS transistors. It also makes the matching between two input transistors worse and consequently aggravates the analog output characteristics. By simply modifying the active layout of HV NMOS transistors, this hump was removed and the analog characteristics (AVO &dVO) were improved significantly. In the help of the improved analog characteristics, it also became possible to reduce the size of the input transistors less than a half of conventional transistors and significantly improve the integration density of LDIs.
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등록된 정보가 없습니다.
참고문헌 (6)
참고문헌 신청
L.A. Akers / 1986 / The inverse-narrow-width effect / IEEE Electron Device Letters EDL-7 : 419 ~
Mizuno, T / 1994 / Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's / IEEE Trans. Electron Devices 41 (11
P. Sallagoity / 1996 / Analysis of width edge effect in advanced isolation schemes for deep submicron CMOS technologies / IEEE Trans. Electron Devices 43 : 1900 ~
S.K. Park / 2000 / CMOSFET characteristics induced by moisture diffusion from inter- layer dielectric in 0.23 um DRAM technology with shallow trench isolation / 38th Annu. Int. Rel
S.P. Murarka / 1975 / Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients / Phys. Rev 12 (6) : 2502 ~
Mizuno, T / 1994 / Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's / IEEE Trans. Electron Devices 41 (11
P. Sallagoity / 1996 / Analysis of width edge effect in advanced isolation schemes for deep submicron CMOS technologies / IEEE Trans. Electron Devices 43 : 1900 ~
S.K. Park / 2000 / CMOSFET characteristics induced by moisture diffusion from inter- layer dielectric in 0.23 um DRAM technology with shallow trench isolation / 38th Annu. Int. Rel
S.P. Murarka / 1975 / Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients / Phys. Rev 12 (6) : 2502 ~
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